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Depth distribution of reactive ion etching‐induced damage in InAlAs/InGaAs heterostructures evaluated by Hall measurements
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10.1063/1.111377
/content/aip/journal/apl/64/22/10.1063/1.111377
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/22/10.1063/1.111377
/content/aip/journal/apl/64/22/10.1063/1.111377
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/content/aip/journal/apl/64/22/10.1063/1.111377
1994-05-30
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Depth distribution of reactive ion etching‐induced damage in InAlAs/InGaAs heterostructures evaluated by Hall measurements
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/22/10.1063/1.111377
10.1063/1.111377
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