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Control of anomalous boron diffusion in the base of Si/SiGe/Si heterojunction bipolar transistors using PtSi
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10.1063/1.111306
/content/aip/journal/apl/64/24/10.1063/1.111306
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/24/10.1063/1.111306
/content/aip/journal/apl/64/24/10.1063/1.111306
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/content/aip/journal/apl/64/24/10.1063/1.111306
1994-06-13
2014-09-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Control of anomalous boron diffusion in the base of Si/SiGe/Si heterojunction bipolar transistors using PtSi
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/24/10.1063/1.111306
10.1063/1.111306
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