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Thermal annealing effect on low temperature molecular beam epitaxy grown GaAs: Arsenic precipitation and the change of resistivity
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10.1063/1.111216
/content/aip/journal/apl/64/26/10.1063/1.111216
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/26/10.1063/1.111216
/content/aip/journal/apl/64/26/10.1063/1.111216
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/content/aip/journal/apl/64/26/10.1063/1.111216
1994-06-27
2014-09-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal annealing effect on low temperature molecular beam epitaxy grown GaAs: Arsenic precipitation and the change of resistivity
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/26/10.1063/1.111216
10.1063/1.111216
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