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Time dependence of dopant diffusion in δ‐doped Si films and properties of Si point defects
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10.1063/1.111189
/content/aip/journal/apl/64/3/10.1063/1.111189
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/3/10.1063/1.111189
/content/aip/journal/apl/64/3/10.1063/1.111189
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/content/aip/journal/apl/64/3/10.1063/1.111189
1994-01-17
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Time dependence of dopant diffusion in δ‐doped Si films and properties of Si point defects
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/3/10.1063/1.111189
10.1063/1.111189
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