No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Degradation of rapid thermal oxides due to the presence of nitrogen in the oxidation ambient
1.M. M. Moslehi and K. C. Saraswat, IEEE J. Solid State Circuits SC-20, 26 (1985).
2.W. Ting, G. Q. Lo, J. Ahn, T. Y. Chu, and D. L. Kwong, IEEE Electron Device Lett. EDL-12, 416 (1991).
3.T. Hori and H. Iwasaki, IEEE Electron Device Lett. EDL-10, 134 (1989).
4.H. Fang, K. S. Krisch, C. G. Sodini, J. E. Chung, and D. A. Antoniadis, IEEE IEDM Tech. Digest 1992, 25.2.1.
5.D. T. Chapman, J. M. Melzak, M. J. Fordham, J. J. Wortman, M. C. Öztürk, and F. Y. Sorrell, Extended Abstracts of the 179th Electrochemical Society Meeting, Washington, DC, 5–10 May 1991 (unpublished), No. 358, pp. 541–543.
6.K. Yamabe, K. Taniguchi, and Y. Matsushita, IEEE/International Reliability Physics Symposium, 1983 (unpublished), pp. 184–190.
Article metrics loading...
Full text loading...
Most read this month
Most cited this month