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Electron intersubband transitions to 0.8 eV (1.55 μm) in InGaAs/AlAs single quantum wells
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6.The data for samples d and e were first reported in Ref. 3, in which they were labeled samples A and B, respectively.
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8.To fit the present experimental data, the model used in Ref. 3 must be modified by assuming a larger conduction band discontinuity between InGaAs and AlAs (e.g., 1.3 vs 1.1 eV), and greater energy dependence of the conduction band effective mass. These changes are well within range of uncertainty in the calculation, particularly in light of the fact that the layers are highly strained and that the quantum well states lie high up in the conduction band of InGaAs.
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