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Improving the mobility of an In0.52Al0.48As/In0.53Ga0.47As inverted modulation‐doped structure by inserting a strained InAs quantum well
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10.1063/1.112089
/content/aip/journal/apl/65/10/10.1063/1.112089
http://aip.metastore.ingenta.com/content/aip/journal/apl/65/10/10.1063/1.112089
/content/aip/journal/apl/65/10/10.1063/1.112089
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/content/aip/journal/apl/65/10/10.1063/1.112089
1994-09-05
2014-12-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improving the mobility of an In0.52Al0.48As/In0.53Ga0.47As inverted modulation‐doped structure by inserting a strained InAs quantum well
http://aip.metastore.ingenta.com/content/aip/journal/apl/65/10/10.1063/1.112089
10.1063/1.112089
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