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Hall measurements on selectively doped InSb heterostructures grown by molecular beam epitaxy on GaAs (001)
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10.1063/1.112007
/content/aip/journal/apl/65/11/10.1063/1.112007
http://aip.metastore.ingenta.com/content/aip/journal/apl/65/11/10.1063/1.112007
/content/aip/journal/apl/65/11/10.1063/1.112007
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/content/aip/journal/apl/65/11/10.1063/1.112007
1994-09-12
2014-09-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hall measurements on selectively doped InSb heterostructures grown by molecular beam epitaxy on GaAs (001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/65/11/10.1063/1.112007
10.1063/1.112007
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