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Fabrication of p‐channel polycrystalline Si1−x Ge x thin‐film transistors by ultrahigh vacuum chemical vapor deposition
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10.1063/1.112890
/content/aip/journal/apl/65/13/10.1063/1.112890
http://aip.metastore.ingenta.com/content/aip/journal/apl/65/13/10.1063/1.112890
/content/aip/journal/apl/65/13/10.1063/1.112890
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/content/aip/journal/apl/65/13/10.1063/1.112890
1994-09-26
2014-10-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of p‐channel polycrystalline Si1−xGex thin‐film transistors by ultrahigh vacuum chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/65/13/10.1063/1.112890
10.1063/1.112890
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