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3.9‐μm InAsSb/AlAsSb double‐heterostructure diode lasers with high output power and improved temperature characteristics
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10.1063/1.112779
/content/aip/journal/apl/65/18/10.1063/1.112779
http://aip.metastore.ingenta.com/content/aip/journal/apl/65/18/10.1063/1.112779
/content/aip/journal/apl/65/18/10.1063/1.112779
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/content/aip/journal/apl/65/18/10.1063/1.112779
1994-10-31
2014-11-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 3.9‐μm InAsSb/AlAsSb double‐heterostructure diode lasers with high output power and improved temperature characteristics
http://aip.metastore.ingenta.com/content/aip/journal/apl/65/18/10.1063/1.112779
10.1063/1.112779
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