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Effect of excess Zn around the active‐stripe mesa on the lasing threshold current of a [01̄1] oriented InGaAsP/InP buried‐heterostructure laser diode
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10.1063/1.112681
/content/aip/journal/apl/65/19/10.1063/1.112681
http://aip.metastore.ingenta.com/content/aip/journal/apl/65/19/10.1063/1.112681
/content/aip/journal/apl/65/19/10.1063/1.112681
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/content/aip/journal/apl/65/19/10.1063/1.112681
1994-11-07
2014-11-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of excess Zn around the active‐stripe mesa on the lasing threshold current of a [01̄1] oriented InGaAsP/InP buried‐heterostructure laser diode
http://aip.metastore.ingenta.com/content/aip/journal/apl/65/19/10.1063/1.112681
10.1063/1.112681
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