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Comparison of ultrathin SiO2 films grown by thermal oxidation in an N2O ambient with those in a 33% O2/N2 ambient
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10.1063/1.112703
/content/aip/journal/apl/65/19/10.1063/1.112703
http://aip.metastore.ingenta.com/content/aip/journal/apl/65/19/10.1063/1.112703
/content/aip/journal/apl/65/19/10.1063/1.112703
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/content/aip/journal/apl/65/19/10.1063/1.112703
1994-11-07
2014-09-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison of ultrathin SiO2 films grown by thermal oxidation in an N2O ambient with those in a 33% O2/N2 ambient
http://aip.metastore.ingenta.com/content/aip/journal/apl/65/19/10.1063/1.112703
10.1063/1.112703
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