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Reflection high‐energy electron diffraction intensity oscillations of germanium growth on Si(100) using gas source molecular beam epitaxy
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10.1063/1.112508
/content/aip/journal/apl/65/24/10.1063/1.112508
http://aip.metastore.ingenta.com/content/aip/journal/apl/65/24/10.1063/1.112508
/content/aip/journal/apl/65/24/10.1063/1.112508
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/content/aip/journal/apl/65/24/10.1063/1.112508
1994-12-12
2014-12-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reflection high‐energy electron diffraction intensity oscillations of germanium growth on Si(100) using gas source molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/65/24/10.1063/1.112508
10.1063/1.112508
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