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New properties and applications of electron‐beam evaporated silicon in submicron elevated source/drain metal‐oxide‐semiconductor field‐effect transistors
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10.1063/1.113014
/content/aip/journal/apl/65/6/10.1063/1.113014
http://aip.metastore.ingenta.com/content/aip/journal/apl/65/6/10.1063/1.113014
/content/aip/journal/apl/65/6/10.1063/1.113014
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/content/aip/journal/apl/65/6/10.1063/1.113014
1994-08-08
2014-11-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: New properties and applications of electron‐beam evaporated silicon in submicron elevated source/drain metal‐oxide‐semiconductor field‐effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/65/6/10.1063/1.113014
10.1063/1.113014
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