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Application of limited reaction processing to atomic layer epitaxy: Growth of cadmium telluride using diisopropyl telluride and dimethyl cadmium
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10.1063/1.112111
/content/aip/journal/apl/65/9/10.1063/1.112111
http://aip.metastore.ingenta.com/content/aip/journal/apl/65/9/10.1063/1.112111
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/content/aip/journal/apl/65/9/10.1063/1.112111
1994-08-29
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Application of limited reaction processing to atomic layer epitaxy: Growth of cadmium telluride using diisopropyl telluride and dimethyl cadmium
http://aip.metastore.ingenta.com/content/aip/journal/apl/65/9/10.1063/1.112111
10.1063/1.112111
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