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Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
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10.1063/1.112116
/content/aip/journal/apl/65/9/10.1063/1.112116
http://aip.metastore.ingenta.com/content/aip/journal/apl/65/9/10.1063/1.112116
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/content/aip/journal/apl/65/9/10.1063/1.112116
1994-08-29
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/65/9/10.1063/1.112116
10.1063/1.112116
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