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Suppression of strain relaxation and roughening of InGaAs on GaAs using ion‐assisted molecular beam epitaxy
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10.1063/1.112951
/content/aip/journal/apl/65/9/10.1063/1.112951
http://aip.metastore.ingenta.com/content/aip/journal/apl/65/9/10.1063/1.112951
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/content/aip/journal/apl/65/9/10.1063/1.112951
1994-08-29
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Suppression of strain relaxation and roughening of InGaAs on GaAs using ion‐assisted molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/65/9/10.1063/1.112951
10.1063/1.112951
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