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Evidence for ballistic transport of two‐dimensional electron gas at liquid‐nitrogen temperatures in a silicon metal–oxide semiconductor field effect transistor with a neck in the middle
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10.1063/1.113364
/content/aip/journal/apl/66/14/10.1063/1.113364
http://aip.metastore.ingenta.com/content/aip/journal/apl/66/14/10.1063/1.113364
/content/aip/journal/apl/66/14/10.1063/1.113364
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/content/aip/journal/apl/66/14/10.1063/1.113364
1995-04-03
2014-08-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evidence for ballistic transport of two‐dimensional electron gas at liquid‐nitrogen temperatures in a silicon metal–oxide semiconductor field effect transistor with a neck in the middle
http://aip.metastore.ingenta.com/content/aip/journal/apl/66/14/10.1063/1.113364
10.1063/1.113364
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