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Enhanced real‐space electron transfer in charge injection transistors with source‐channel heterojunctions formed by graded Al x Ga1−x As layer and shallow Pd/Ge ohmic contacts
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10.1063/1.113365
/content/aip/journal/apl/66/14/10.1063/1.113365
http://aip.metastore.ingenta.com/content/aip/journal/apl/66/14/10.1063/1.113365
/content/aip/journal/apl/66/14/10.1063/1.113365
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/content/aip/journal/apl/66/14/10.1063/1.113365
1995-04-03
2014-08-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced real‐space electron transfer in charge injection transistors with source‐channel heterojunctions formed by graded AlxGa1−xAs layer and shallow Pd/Ge ohmic contacts
http://aip.metastore.ingenta.com/content/aip/journal/apl/66/14/10.1063/1.113365
10.1063/1.113365
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