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High strain effects evidenced by Raman scattering in arsenic clusters in As‐implanted GaAs
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10.1063/1.113279
/content/aip/journal/apl/66/15/10.1063/1.113279
http://aip.metastore.ingenta.com/content/aip/journal/apl/66/15/10.1063/1.113279
/content/aip/journal/apl/66/15/10.1063/1.113279
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/content/aip/journal/apl/66/15/10.1063/1.113279
1995-04-10
2014-10-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High strain effects evidenced by Raman scattering in arsenic clusters in As‐implanted GaAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/66/15/10.1063/1.113279
10.1063/1.113279
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