Full text loading...
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Crystalline quality of strain‐free GaAs‐on‐Si structures formed by annealing under ultrahigh pressure
1.H. Ishiwara, T. Sato, and A. Sawaoka, Mater. Res. Soc. Symp. Proc. 239, 467 (1992).
2.H. Ishiwara, T. Sato, and A. Sawaoka, Appl. Phys. Lett. 61, 1951 (1992).
3.H. Ishiwara, H. Wakabayashi, K. Miyazaki, K. Fukao, and A. Sawaoka, Jpn. J. Appl. Phys. 32, 308 (1993).
Article metrics loading...