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Transient current study of low‐temperature grown GaAs using an nin structure
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10.1063/1.113445
/content/aip/journal/apl/66/21/10.1063/1.113445
http://aip.metastore.ingenta.com/content/aip/journal/apl/66/21/10.1063/1.113445
/content/aip/journal/apl/66/21/10.1063/1.113445
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/content/aip/journal/apl/66/21/10.1063/1.113445
1995-05-22
2014-12-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transient current study of low‐temperature grown GaAs using an n‐i‐n structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/66/21/10.1063/1.113445
10.1063/1.113445
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