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Tightly confined one‐dimensional states in T‐shaped GaAs edge quantum wires with AlAs barriers
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8.In fact, the region designated as the 50 nm thick AlAs layer (see Fig. 1) is a 5 period superlattice consisting of 10 nm thick AlAs and 1 nm thick GaAs. This superlattice structure is quite effective to decrease the interface roughness of the multi-QW layer in the first growth.
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