Full text loading...
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Tightly confined one‐dimensional states in T‐shaped GaAs edge quantum wires with AlAs barriers
1.H. Sakaki, K. Wagatsuma, J. Hamasaki, and S. Saito, Thin Solid Films 36, 497 (1976).
2.H. Sakaki, Jpn. J. Appl. Phys. 19, L735 (1980).
3.Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982).
4.Y. C. Chang, L. L. Chang, and L. Esaki, Appl. Phys. Lett. 47, 1324 (1985).
5.L. N. Pfeiffer, K. West, H. L. Stormer, J. P. Eisenstein, K. W. Baldwin, D. Gershoni, and J. Spector, Appl. Phys. Lett. 56, 1697 (1990).
6.J. Motohisa and H. Sakaki, Appl. Phys. Lett. 63, 1786 (1993).
7.W. Wegsheider, L. N. Pfeiffer, M. M. Dignam, K. West, S. L. McCall, and R. Hull, Phys. Rev. Lett. 71, 4071 (1993).
8.In fact, the region designated as the 50 nm thick AlAs layer (see Fig. 1) is a 5 period superlattice consisting of 10 nm thick AlAs and 1 nm thick GaAs. This superlattice structure is quite effective to decrease the interface roughness of the multi-QW layer in the first growth.
9.T. Someya, H. Akiyama, and H. Sakaki, Phys. Rev. Lett. 74, 3664 (1995).
Article metrics loading...