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Temperature dependence of threshold current density J th and differential efficiency η d of high‐power InGaAsP/GaAs (λ=0.8 μm) lasers
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10.1063/1.114193
/content/aip/journal/apl/66/3/10.1063/1.114193
http://aip.metastore.ingenta.com/content/aip/journal/apl/66/3/10.1063/1.114193
/content/aip/journal/apl/66/3/10.1063/1.114193
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/content/aip/journal/apl/66/3/10.1063/1.114193
1995-01-16
2014-08-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence of threshold current density Jth and differential efficiency ηd of high‐power InGaAsP/GaAs (λ=0.8 μm) lasers
http://aip.metastore.ingenta.com/content/aip/journal/apl/66/3/10.1063/1.114193
10.1063/1.114193
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