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600 fs 10.6 μm infrared pulse generation with radiation‐damaged GaAs reflection switch
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10.1063/1.114036
/content/aip/journal/apl/66/4/10.1063/1.114036
http://aip.metastore.ingenta.com/content/aip/journal/apl/66/4/10.1063/1.114036
/content/aip/journal/apl/66/4/10.1063/1.114036
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/content/aip/journal/apl/66/4/10.1063/1.114036
1995-01-23
2014-11-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 600 fs 10.6 μm infrared pulse generation with radiation‐damaged GaAs reflection switch
http://aip.metastore.ingenta.com/content/aip/journal/apl/66/4/10.1063/1.114036
10.1063/1.114036
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