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Three‐stage lattice relaxation of Ge islands on Si(111) measured by tunneling microscopy
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10.1063/1.114052
/content/aip/journal/apl/66/4/10.1063/1.114052
http://aip.metastore.ingenta.com/content/aip/journal/apl/66/4/10.1063/1.114052
/content/aip/journal/apl/66/4/10.1063/1.114052
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/content/aip/journal/apl/66/4/10.1063/1.114052
1995-01-23
2014-10-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Three‐stage lattice relaxation of Ge islands on Si(111) measured by tunneling microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/66/4/10.1063/1.114052
10.1063/1.114052
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