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Gated Hall effect measurements in high‐mobility n‐type Si/SiGe modulation‐doped heterostructures
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10.1063/1.113440
/content/aip/journal/apl/66/7/10.1063/1.113440
http://aip.metastore.ingenta.com/content/aip/journal/apl/66/7/10.1063/1.113440
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/content/aip/journal/apl/66/7/10.1063/1.113440
1995-02-13
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gated Hall effect measurements in high‐mobility n‐type Si/SiGe modulation‐doped heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/66/7/10.1063/1.113440
10.1063/1.113440
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