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Lasing operation up to 200 K in the wavelength range of 570–590 nm by GaInP/AlGaInP double‐heterostructure laser diodes on GaAsP substrates
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10.1063/1.114187
/content/aip/journal/apl/66/7/10.1063/1.114187
http://aip.metastore.ingenta.com/content/aip/journal/apl/66/7/10.1063/1.114187
/content/aip/journal/apl/66/7/10.1063/1.114187
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/content/aip/journal/apl/66/7/10.1063/1.114187
1995-02-13
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lasing operation up to 200 K in the wavelength range of 570–590 nm by GaInP/AlGaInP double‐heterostructure laser diodes on GaAsP substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/66/7/10.1063/1.114187
10.1063/1.114187
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