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Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures
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10.1063/1.113577
/content/aip/journal/apl/66/9/10.1063/1.113577
http://aip.metastore.ingenta.com/content/aip/journal/apl/66/9/10.1063/1.113577
/content/aip/journal/apl/66/9/10.1063/1.113577
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/content/aip/journal/apl/66/9/10.1063/1.113577
1995-02-27
2014-11-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/66/9/10.1063/1.113577
10.1063/1.113577
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