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Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C
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10.1063/1.113579
/content/aip/journal/apl/66/9/10.1063/1.113579
http://aip.metastore.ingenta.com/content/aip/journal/apl/66/9/10.1063/1.113579
/content/aip/journal/apl/66/9/10.1063/1.113579
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/content/aip/journal/apl/66/9/10.1063/1.113579
1995-02-27
2014-09-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C
http://aip.metastore.ingenta.com/content/aip/journal/apl/66/9/10.1063/1.113579
10.1063/1.113579
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