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Characterization of strain in an advanced semiconductor laser structure with nanometer range resolution using a new algorithm for electron diffraction contrast imaging interpretation
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10.1063/1.114482
/content/aip/journal/apl/67/11/10.1063/1.114482
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/11/10.1063/1.114482
/content/aip/journal/apl/67/11/10.1063/1.114482
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/content/aip/journal/apl/67/11/10.1063/1.114482
1995-09-11
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of strain in an advanced semiconductor laser structure with nanometer range resolution using a new algorithm for electron diffraction contrast imaging interpretation
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/11/10.1063/1.114482
10.1063/1.114482
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