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Far‐infrared emission from hot quasi‐one‐dimensional quantum wires in GaAs
1.K. Hirakawa, M. Grayson, D. C. Tsui, and C. Kurdak, Phys. Rev. B 47, 16651 (1993).
2.C. Wirner, C. Kiener, W. Boxleitner, M. Witzany, E. Gornik, P. Vogl, G. Böhm, and G. Weimann, Phys. Rev. Lett. 70, 2609 (1993).
3.K.-F. Berggren, T. J. Thornton, D. J. Newson, and M. Pepper, Phys. Rev. Lett. 57, 1769 (1986).
4.Solid State Physics: Semiconductor Heterostructures and Nanostructures, edited by H. Ehrenreich and D. Turnbull (Academic, New York, 1991).
5.C. Lettau, M. Wendel, A. Schmeller, W. Hansen, J. P. Kotthaus, W. Klein, G. Böhm, G. Tränkle, G. Weimann, and M. Holland, Phys. Rev. B 40, 2432 (1994).
6.M. Helm, E. Colas, P. England, F. DeRosa, and S. J. Allen , Jr., Appl. Phys. Lett. 53, 1714 (1988).
7.J. D. Jackson, Classical Electrodynamics, 2nd ed. (Wiley, New York, 1975), pp. 285–287.
8.R. A. Hopfel, E. Vass, and E. Gornik, Solid State Commun. 49, 501 (1984); R. A. Hopfel and G. Weimann, Appl. Phys. Lett. 46, 291 (1985).
9.Detailed calculations (by M. Grayson) show that the assumption of specular uniformity, , accurately predicts the total specular power emitted to within 2.6% for a 2D conductor at a GaAs/gHe interface, provided that for all ω: σ(ω)⩽/2; where is the 2D conduction that optimizes absorption at the GaAs/gHe interface. In our case σ(ω)<2%×
10.P. W. Kruse, L. D. McGlauchlin, and R. B. McQuistan, Infrared Technology (Wiley, New York, 1962).
11.E. H. Johnson and D. H. Dickey, Phys. Rev. B 1, 2676 (1970).
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