1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Neutral‐donor‐bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition
Rent:
Rent this article for
USD
10.1063/1.115046
/content/aip/journal/apl/67/12/10.1063/1.115046
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/12/10.1063/1.115046
/content/aip/journal/apl/67/12/10.1063/1.115046
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/67/12/10.1063/1.115046
1995-09-18
2014-07-29
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Neutral‐donor‐bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/12/10.1063/1.115046
10.1063/1.115046
SEARCH_EXPAND_ITEM