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Transient enhanced diffusion without {311} defects in low energy B+‐implanted silicon
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10.1063/1.114775
/content/aip/journal/apl/67/14/10.1063/1.114775
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/14/10.1063/1.114775
/content/aip/journal/apl/67/14/10.1063/1.114775
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/content/aip/journal/apl/67/14/10.1063/1.114775
1995-10-02
2014-07-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transient enhanced diffusion without {311} defects in low energy B+‐implanted silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/14/10.1063/1.114775
10.1063/1.114775
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