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All solid source molecular beam epitaxy growth of strained‐layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm)
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10.1063/1.114335
/content/aip/journal/apl/67/16/10.1063/1.114335
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/16/10.1063/1.114335
/content/aip/journal/apl/67/16/10.1063/1.114335
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/content/aip/journal/apl/67/16/10.1063/1.114335
1995-10-16
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: All solid source molecular beam epitaxy growth of strained‐layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm)
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/16/10.1063/1.114335
10.1063/1.114335
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