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Differences between As2 and As4 in the homoepitaxial growth of GaAs(110) by molecular beam epitaxy
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10.1063/1.114805
/content/aip/journal/apl/67/19/10.1063/1.114805
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/19/10.1063/1.114805
/content/aip/journal/apl/67/19/10.1063/1.114805
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/content/aip/journal/apl/67/19/10.1063/1.114805
1995-11-06
2014-08-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Differences between As2 and As4 in the homoepitaxial growth of GaAs(110) by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/19/10.1063/1.114805
10.1063/1.114805
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