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Time‐resolved measurement of single‐electron tunneling in a Si single‐electron transistor with satellite Si islands
1.D. V. Averin and K. K. Likahrev, J. Low Temp. Phys. 62, 345 (1986).
2.K. K. Likharev, IEEE Trans. Mag. MAG-23, 1142 (1987).
3.J. R. Tucker, Appl. Phys. Lett. 72, 4399 (1992).
4.T. A. Fulton and G. J. Dolan, Phys. Rev. Lett. 59, 109 (1987).
5.P. Delsing, K. K. Likharev, L. S. Kuzmin, and T. Claeson, Phys. Rev. Lett. 63, 1861 (1989).
6.U. Meriav, M. A. Kastner, and S. J. Wind, Phys. Rev. Lett. 65, 771 (1990).
7.M. Field, C. G. Smith, M. Pepper, D. A. Ritchie, J. E. F. Frost, G. A. C. Jones, and D. C. Hasko, Phys. Rev. Lett. 70, 1311 (1993).
8.H. Matsuoka, T. Ichiguchi, T. Yoshimura, and E. Takeda, Appl. Phys. Lett. 64, 586 (1994).
9.D. Ali and H. Ahmed, Appl. Phys. Lett. 64, 2119 (1994).
10.P. D. Dresselhaus, L. Ji, S. Han, J. E. Lukens, and K. K. Likharev, Phys. Rev. Lett. 72, 3226 (1994).
11.K. Nakazato, R. J. Blaikie, J. R. A. Cleaver, and H. Ahmed, Electron. Lett. 29, 384 (1993).
12.K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai, and K. Seki, IEEE Trans. Electron Devices 41, 1628 (1994).
13.Y. Takahashi, M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, Y. Nakajima, S. Horiguchi, K. Murase, and M. Tabe, IEDM Tech. Dig. 1994 938.
14.Y. Takahashi, M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, Y. Nakajima, S. Horiguchi, K. Murase, and M. Tabe, Electron. Lett. 31, 136 (1995).
15.M. Nagase, T. Ishiyama, and K. Murase, Silicon-On-Insulator for Technology and Devices (The Electrochemical Society, Pennington, NJ, 1994), p. 191.
16.Strictly speaking, hysteresis happens only when CBs at more than two tunnel junctions are successively broken one after another. For the circuit shown in Fig. 1(b), hysteresis occurs in two cases. One is when an electron first enters the SET island from the source (drain) and the resultant breakdown of the CB between the SET and the satellite islands enables an electron to tunnel into the satellite island. The other is when an electron tunnels from the SET island to the satellite island first and the electrons remaining in the SET island are complemented by an electron tunneling from the source (drain).
17.K. S. Ralls, W. J. Skocpol, D. L. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth, and D. M. Tennant, Phys. Rev. Lett. 52, 228 (1984).
18.K. R. Farmer, C. T. Rogers, and R. A. Buhrman, Phys. Rev. Lett. 25, 2255 (1987).
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