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GaInAs/GaAs/GaInP strained quantum well lasers (λ∼0.98 μm) grown by molecular beam epitaxy using solid phosphorus and arsenic valved cracking cells
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10.1063/1.114825
/content/aip/journal/apl/67/20/10.1063/1.114825
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/20/10.1063/1.114825
/content/aip/journal/apl/67/20/10.1063/1.114825
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/content/aip/journal/apl/67/20/10.1063/1.114825
1995-11-13
2014-11-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaInAs/GaAs/GaInP strained quantum well lasers (λ∼0.98 μm) grown by molecular beam epitaxy using solid phosphorus and arsenic valved cracking cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/20/10.1063/1.114825
10.1063/1.114825
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