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Development of preferred orientation in polycrystalline TiN layers grown by ultrahigh vacuum reactive magnetron sputtering
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15.Electronic mail: email@example.comNormalized 111 and 002 XRD peak intensities I, from 1-μm-thick TiN layers deposited on amorphous at 350 °C under ion irradiation with and X-ray diffraction patterns from TiN films deposited on amorphous at 350 °C under ion irradiation with as a function of incident ion-to-metal ratio and film thickness t: and (b) High-resolution XTEM micrographs showing the near-interface regions of TiN films grown on amorphous at 350 °C under ion irradiation with and an incident ion-to-metal ratio of (a) and (b)
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