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Improvement in electrical properties of buried SiO2 layers by high‐temperature oxidation
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10.1063/1.115221
/content/aip/journal/apl/67/22/10.1063/1.115221
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/22/10.1063/1.115221
/content/aip/journal/apl/67/22/10.1063/1.115221
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/content/aip/journal/apl/67/22/10.1063/1.115221
1995-11-27
2014-11-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement in electrical properties of buried SiO2 layers by high‐temperature oxidation
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/22/10.1063/1.115221
10.1063/1.115221
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