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Subthreshold slope in polycrystalline silicon thin‐film transistors and effect of the gate oxide on the subthreshold characteristics
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10.1063/1.115367
/content/aip/journal/apl/67/25/10.1063/1.115367
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/25/10.1063/1.115367
/content/aip/journal/apl/67/25/10.1063/1.115367
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/content/aip/journal/apl/67/25/10.1063/1.115367
1995-12-18
2014-12-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Subthreshold slope in polycrystalline silicon thin‐film transistors and effect of the gate oxide on the subthreshold characteristics
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/25/10.1063/1.115367
10.1063/1.115367
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