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InAsSb/InAlAsSb strained quantum‐well diode lasers emitting at 3.9 μm
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10.1063/1.115435
/content/aip/journal/apl/67/3/10.1063/1.115435
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/3/10.1063/1.115435
/content/aip/journal/apl/67/3/10.1063/1.115435
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/content/aip/journal/apl/67/3/10.1063/1.115435
1995-07-17
2014-11-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InAsSb/InAlAsSb strained quantum‐well diode lasers emitting at 3.9 μm
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/3/10.1063/1.115435
10.1063/1.115435
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