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Impurity‐free layer disordering in pin and nip AlGaAs‐GaAs multiple quantum well device structures: The Fermi level effect revisited
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10.1063/1.114548
/content/aip/journal/apl/67/4/10.1063/1.114548
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/4/10.1063/1.114548
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/content/aip/journal/apl/67/4/10.1063/1.114548
1995-07-24
2014-09-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impurity‐free layer disordering in p‐i‐n and n‐i‐p AlGaAs‐GaAs multiple quantum well device structures: The Fermi level effect revisited
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/4/10.1063/1.114548
10.1063/1.114548
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