Full text loading...
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Blocking injected dark current in impurity‐band‐conduction photodetectors using a PtSi Schottky barrier
1.M. D. Petroff and M. G. Stapelbroek, U.S. Patent No. 4,568,960 (1986).
2.B. G. Martin, Solid State Electron. 33, 427 (1990).
3.B. G. Martin, J. Appl. Phys. 75, 4539 (1994).
4.Dr. J. Huffman (private communication).
5.S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
6.S. P. Murarka, Silicides for VLSI Applications (Academic, New York, 1983).
Article metrics loading...