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Abruptness of Ge composition at the Si/SiGe interface grown by ultrahigh vacuum chemical vapor deposition
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10.1063/1.114471
/content/aip/journal/apl/67/8/10.1063/1.114471
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/8/10.1063/1.114471
/content/aip/journal/apl/67/8/10.1063/1.114471
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/content/aip/journal/apl/67/8/10.1063/1.114471
1995-08-21
2014-08-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Abruptness of Ge composition at the Si/SiGe interface grown by ultrahigh vacuum chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/8/10.1063/1.114471
10.1063/1.114471
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