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Theoretical analysis of the geometries of the luminescent regions in porous silicon
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15.Inclusion of disorder in the surface of the model might introduce tail states at the band edges and decrease the energy of the lowest energy allowed transition by a small amount. Work on the effects of surface disorder on the luminescence energy is in progress.
16.We calculate the Coulomb energy here using perturbation theory within the effective mass approximation for a spherical exciton with the bulk Si dielectric constant [L. E. Brus, J. Chem. Phys. 80, 4403 (1984)]. We have performed full two-particle nonperturbative calculations which indicate that this is a good approximation for crystallites (Ref. 7).
17.The measured includes a contribution from unetched crystalline Si. Correcting for this contribution would move the experimental points further into the crystallite region.
18.A mixture of wires and crystallites has also been postulated in order to bring PP lifetime calculations into agreement with experiment [C.-Y. Yeh, S. B. Zhang, and A. Zunger, Appl. Phys. Lett. 63, 3455 (1993)].
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