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Growth of heteroepitaxial Si1−xy Ge x C y alloys on silicon using novel deposition chemistry
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10.1063/1.114386
/content/aip/journal/apl/67/9/10.1063/1.114386
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/9/10.1063/1.114386
/content/aip/journal/apl/67/9/10.1063/1.114386
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/content/aip/journal/apl/67/9/10.1063/1.114386
1995-08-28
2014-08-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of heteroepitaxial Si1−x−yGexCy alloys on silicon using novel deposition chemistry
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/9/10.1063/1.114386
10.1063/1.114386
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