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Study of chemically assisted ion beam etching of GaN using HCl gas
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10.1063/1.114387
/content/aip/journal/apl/67/9/10.1063/1.114387
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/9/10.1063/1.114387
/content/aip/journal/apl/67/9/10.1063/1.114387
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/content/aip/journal/apl/67/9/10.1063/1.114387
1995-08-28
2014-09-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of chemically assisted ion beam etching of GaN using HCl gas
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/9/10.1063/1.114387
10.1063/1.114387
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