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High mobility GaAs heterostructure field effect transistor for nanofabrication in which dopant‐induced disorder is eliminated
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10.1063/1.114391
/content/aip/journal/apl/67/9/10.1063/1.114391
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/9/10.1063/1.114391
/content/aip/journal/apl/67/9/10.1063/1.114391
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/content/aip/journal/apl/67/9/10.1063/1.114391
1995-08-28
2014-12-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High mobility GaAs heterostructure field effect transistor for nanofabrication in which dopant‐induced disorder is eliminated
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/9/10.1063/1.114391
10.1063/1.114391
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