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Threshold current temperature dependence of GaInP/(Al y Ga1−y )InP 670 nm quantum well lasers
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10.1063/1.114392
/content/aip/journal/apl/67/9/10.1063/1.114392
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/9/10.1063/1.114392
/content/aip/journal/apl/67/9/10.1063/1.114392
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/content/aip/journal/apl/67/9/10.1063/1.114392
1995-08-28
2014-11-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Threshold current temperature dependence of GaInP/(AlyGa1−y)InP 670 nm quantum well lasers
http://aip.metastore.ingenta.com/content/aip/journal/apl/67/9/10.1063/1.114392
10.1063/1.114392
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